BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR
= 200 Vdc)
(VR
= 200 Vdc, T
J
= 150
°C)
IR
?
?
0.1
100
Adc
Reverse Breakdown Voltage
(IBR
= 100
Adc)
V(BR)
250
?
Vdc
Forward Voltage
(IF
= 100 mAdc)
(IF
= 200 mAdc)
VF
?
?
1000
1250
mV
Diode Capacitance
(VR
= 0, f = 1.0 MHz)
CD
?
5.0
pF
Reverse Recovery Time
(IF
= I
R
= 30 mAdc, R
L
= 100
)
trr
?
50
ns
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak)
is equal to 30 mA.
Notes: 3. tp
? t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 3.0 mA
OUTPUT PULSE
(IF
= I
R
= 30 mA; MEASURED
at iR(REC)
= 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
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